The R6511END3 is an N-channel 650V power MOSFET in a TO-252 package, designed for switching applications with low on-resistance and fast switching speed. It has a continuous drain current of ±11A and a maximum power dissipation of 124W at 25°C. The device features a maximum RDS(on) of 0.4Ω at 25°C and a junction operating temperature range of -55°C to +150°C. It is RoHS compliant and suitable for parallel operation. Thermal resistance from junction to case is 1.0°C/W, and junction-to-ambient is 147°C/W on a standard FR4 PCB. The part includes an integrated body diode with reverse recovery time of 430ns at 11A and meets the RoHS standard. The package is supplied in an embossed tape reel with 2500 units per reel.
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6511END3 |
| Product Name | 650V 11A TO-252, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 11000 milliamps |
| QG | 32 nC |
| PD | 124000 milliwatts |
