The R6509KNX is a 650V, 9A N-channel power MOSFET in a TO-220FM package, designed for high-speed switching applications. It has a maximum on-resistance of 0.585Ω at 25°C and can dissipate up to 48W. The device supports continuous drain current up to ±9A and pulsed drain current up to ±27A, with an avalanche energy rating of 158mJ. Thermal resistance from junction to case is 2.6°C/W and from junction to ambient is 70°C/W. It operates from -55°C to +150°C and is RoHS compliant with lead-free plating.
R6509KNX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6509KNX |
| Product Name | 650V 9A TO-220FM, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 9000 milliamps |
| QG | 16.5 nC |
| PD | 48000 milliwatts |
