The R6509KNJ is an N-channel 650V, 9A power MOSFET in a TO-263 package, designed for high-speed switching applications. It has a maximum on-resistance of 0.585Ω at 25°C and dissipates up to 94W with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 1.3°C/W, and junction-to-ambient is 80°C/W when mounted on an FR4 PCB. The device is RoHS compliant, features ultra-fast switching, and supports parallel operation. The gate threshold voltage ranges from 3V to 5V, with a total gate charge of 16.5nC. Body diode reverse recovery time is 360ns at 9A.
R6509KNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6509KNJ |
| Product Name | 650V 9A TO-263, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 9000 milliamps |
| QG | 16.5 nC |
| PD | 94000 milliwatts |
