The R6509KND3 is an N-channel 650V power MOSFET designed for high-speed switching applications, with a continuous drain current of 9A and a maximum on-resistance of 0.585Ω at 25°C. It is housed in a TO-252 package and rated for a maximum power dissipation of 94W. The device supports a junction temperature range of -55°C to 150°C, features Pb-free plating, and is RoHS compliant. It has a single-pulse avalanche energy rating of 158mJ and a gate threshold voltage between 3V and 5V.
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6509KND3 |
| Product Name | High-speed Switching, Nch 650V 9A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 9000 milliamps |
| QG | 16.5 nC |
| PD | 94000 milliwatts |
