ROHM Semiconductor GmbH 650V 9A TO-220FM, Low-noise Power MOSFET R6509ENX

The R6509ENX is an N-channel 650V 9A power MOSFET in a TO-220FM package, designed for switching applications. It has a maximum on-resistance of 0.585Ω at 25°C, a power dissipation of 48W, and a junction temperature range of -55°C to +150°C. The device is RoHS compliant and features fast switching and easy parallel use. Thermal resistance is 2.6°C/W junction-to-case and 70°C/W junction-to-ambient. The gate-source voltage rating is ±20V with a gate threshold voltage of 2V to 4V. Avalanche energy capability is 158mJ. Input, output, and reverse transfer capacitances are 430pF, 580pF, and 65pF respectively at specified conditions.