The R6509END3 is a N-channel 650V 9A power MOSFET in a TO-252 package, designed for switching applications with low on-resistance and fast switching speed. It has a maximum drain-source voltage of 650V, continuous drain current of ±9A, and power dissipation of 94W at 25°C. The device has a maximum on-resistance of 0.585Ω at 25°C and a junction temperature range of -55°C to +150°C. It is RoHS compliant and features a thermal resistance junction-to-case of 1.3°C/W and junction-to-ambient of 147°C/W when mounted on an FR4 PCB. The part includes GaN body diode characteristics with a reverse recovery time of 400ns and peak reverse recovery current of 20A.
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6509END3 |
| Product Name | 650V 9A TO-252, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 9000 milliamps |
| QG | 24 nC |
| PD | 94000 milliwatts |
