The R6507KNX is a N-channel 650V power MOSFET rated for 7A continuous drain current, housed in a TO-220FM package. It has a maximum on-resistance of 0.665Ω at 25°C and dissipates 46W at 25°C case temperature. The device supports a junction temperature range of -55°C to +150°C, features ultra-fast switching, and is RoHS compliant. Thermal resistance from junction to case is up to 2.7°C/W, and junction to ambient is up to 70°C/W. The gate threshold voltage ranges from 3V to 5V, and it includes a body diode with a reverse recovery time of 320ns and peak recovery current of 17A.
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6507KNX |
| Product Name | 650V 7A TO-220FM, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 7000 milliamps |
| QG | 14.5 nC |
| PD | 46000 milliwatts |
