The R6507KNJ is an N-channel 650V 7A power MOSFET in a TO-263 package, designed for high-speed switching applications. It has a maximum on-resistance of 0.665Ω at 25°C and a power dissipation of 78W. The device supports a continuous drain current of ±7A and a pulsed drain current of ±21A, with a junction temperature range of -55°C to +150°C. It features ultra-fast switching, low gate charge, and is RoHS compliant. Thermal resistance from junction to case is 1.6°C/W, and junction-to-ambient is 80°C/W on an FR4 PCB. The gate threshold voltage ranges from 3V to 5V, and the device is rated for single-pulse avalanche energy of 136mJ.
R6507KNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6507KNJ |
| Product Name | 650V 7A TO-263, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 7000 milliamps |
| QG | 14.5 nC |
| PD | 78000 milliwatts |
