The R6507KND3 is an N-channel 650V MOSFET designed for high-speed switching applications, housed in a TO-252 package. It has a maximum continuous drain current of ±7A and a maximum on-resistance of 0.665Ω at 25°C. The device supports a power dissipation of 78W and operates with a junction temperature range of -55°C to +150°C. It features ultra-fast switching, low input and output capacitance, and is RoHS compliant. Thermal resistance from junction to case is 1.6°C/W, and to ambient is 147°C/W when mounted on a standard FR4 PCB. The part is rated for single-pulse avalanche energy of 136 mJ and includes a body diode with a reverse recovery time of 320 ns at 7A. Packaging is in embossed tape with 2500 pieces per reel.
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6507KND3 |
| Product Name | High-speed Switching, Nch 650V 7A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 7000 milliamps |
| QG | 14.5 nC |
| PD | 78000 milliwatts |
