ROHM Semiconductor GmbH 650V 7A TO-220FM, Low-noise Power MOSFET R6507ENX

Description
R6507ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Description
R6507ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Datasheet
Datasheet Summary
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The R6507ENX is an N-channel 650V power MOSFET in a TO-220FM package with a continuous drain current of ±7A and a maximum on-resistance of 0.665Ω at 25°C. It has a power dissipation rating of 46W, a junction temperature range of -55°C to +150°C, and is RoHS compliant. The device features low on-resistance, fast switching, and is suitable for switching applications.

Datasheet Summary
Powered by GS/AI

The R6507ENX is an N-channel 650V power MOSFET in a TO-220FM package with a continuous drain current of ±7A and a maximum on-resistance of 0.665Ω at 25°C. It has a power dissipation rating of 46W, a junction temperature range of -55°C to +150°C, and is RoHS compliant. The device features low on-resistance, fast switching, and is suitable for switching applications.

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650V 7A TO-220FM, Low-noise Power MOSFET - R6507ENX - ROHM Semiconductor GmbH
Willich, Germany
650V 7A TO-220FM, Low-noise Power MOSFET
R6507ENX
650V 7A TO-220FM, Low-noise Power MOSFET R6507ENX
R6507ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

R6507ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number R6507ENX
Product Name 650V 7A TO-220FM, Low-noise Power MOSFET
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 7000 milliamps
QG 20 nC
PD 46000 milliwatts
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