The R6507END3 is an N-channel 650V 7A Power MOSFET in a TO-252 package, designed for switching applications. It has a maximum drain-source on-state resistance of 0.665Ω at 25°C and can dissipate up to 78W with a junction temperature range of -55°C to 150°C. The device is RoHS compliant and features fast switching speed and low gate charge. It is mountable on epoxy PCB FR4 (20mm x 20mm x 0.8mm) with a thermal resistance from junction to ambient of 147°C/W. The part is packaged in embossed tape reels of 2500 units.
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6507END3 |
| Product Name | 650V 7A TO-252, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 7000 milliamps |
| QG | 20 nC |
| PD | 78000 milliwatts |
