The R6504KNX is an N-channel 650V power MOSFET in a TO-220FM package, designed for high-speed switching applications. It has a continuous drain current rating of ±4.0A and a maximum on-resistance of 1.050Ω at 25°C. The device dissipates up to 40W and operates with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 3.13°C/W, and junction-to-ambient is 70°C/W. It is RoHS compliant and features low on-resistance, fast switching, and easy parallel operation. The gate threshold voltage ranges from 3V to 5V, and total gate charge is 10nC at 300V drain voltage.
R6504KNX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6504KNX |
| Product Name | 650V 4A TO-220FM, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 4000 milliamps |
| QG | 10 nC |
| PD | 40000 milliwatts |
