The R6504KND3 is an N-channel 650V, 4A power MOSFET in a TO-252 package, designed for high-speed switching applications. It has a maximum on-resistance of 1.050Ω at 25°C, a continuous drain current rating of ±4.0A, and a power dissipation of 58W. The device supports a junction temperature range of -55°C to +150°C and is RoHS compliant. Thermal resistance from junction to case is up to 2.2°C/W, and junction-to-ambient is up to 147°C/W when mounted on an FR4 PCB. It features low gate charge and fast switching characteristics, with a gate plateau voltage of 6.5V and total gate charge of 10nC at 300V drain voltage.
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6504KND3 |
| Product Name | High-speed Switching, Nch 650V 4A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 4000 milliamps |
| QG | 10 nC |
| PD | 58000 milliwatts |
