ROHM Semiconductor GmbH 650V 4A TO-220FM, Low-noise Power MOSFET R6504ENX

Description
R6504ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Description
R6504ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Datasheet
Datasheet Summary
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The R6504ENX is an N-channel 650V 4A power MOSFET in a TO-220FM package, designed for switching applications. It has a maximum drain-source on-resistance of 1.050Ω at 25°C, a continuous drain current of ±4.0A, and a power dissipation rating of 40W. The device supports a junction temperature range of -55°C to +150°C, features low on-resistance and fast switching, and is RoHS compliant. Thermal resistance from junction to case is 3.13°C/W, and from junction to ambient is 70°C/W.

Datasheet Summary
Powered by GS/AI

The R6504ENX is an N-channel 650V 4A power MOSFET in a TO-220FM package, designed for switching applications. It has a maximum drain-source on-resistance of 1.050Ω at 25°C, a continuous drain current of ±4.0A, and a power dissipation rating of 40W. The device supports a junction temperature range of -55°C to +150°C, features low on-resistance and fast switching, and is RoHS compliant. Thermal resistance from junction to case is 3.13°C/W, and from junction to ambient is 70°C/W.

Suppliers

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Supplier Links
650V 4A TO-220FM, Low-noise Power MOSFET - R6504ENX - ROHM Semiconductor GmbH
Willich, Germany
650V 4A TO-220FM, Low-noise Power MOSFET
R6504ENX
650V 4A TO-220FM, Low-noise Power MOSFET R6504ENX
R6504ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

R6504ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number R6504ENX
Product Name 650V 4A TO-220FM, Low-noise Power MOSFET
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 4000 milliamps
QG 15 nC
PD 40000 milliwatts
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