The R6504ENJ is an N-channel 650V 4A power MOSFET in a TO-263 package, designed for switching applications. It has a maximum on-resistance of 1.050Ω at 25°C, a continuous drain current of ±4.0A, and a power dissipation of 58W. The device supports a junction temperature range of -55°C to +150°C, features fast switching speed, and is RoHS compliant. Thermal resistance from junction to case is up to 2.2°C/W, and junction-to-ambient is up to 80°C/W when mounted on an epoxy PCB FR4 (25mm x 27mm x 0.8mm). Packaged in embossed tape with a basic ordering unit of 1000 pieces.
R6504ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6504ENJ |
| Product Name | 650V 4A TO-263, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 4000 milliamps |
| QG | 15 nC |
| PD | 58000 milliwatts |
