ROHM Semiconductor GmbH 650V 4A TO-263, Low-noise Power MOSFET R6504ENJ

Description
R6504ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
  • 650V 4A TO-263, Low-noise Power MOSFET - R6504ENJ - ROHM Semiconductor GmbH
    ROHM Semiconductor GmbH
Datasheet
Description
R6504ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Datasheet

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650V 4A TO-263, Low-noise Power MOSFET - R6504ENJ - ROHM Semiconductor GmbH
ROHM Semiconductor GmbH
Willich, Germany
650V 4A TO-263, Low-noise Power MOSFET
R6504ENJ
650V 4A TO-263, Low-noise Power MOSFET R6504ENJ
R6504ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

R6504ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number R6504ENJ
Product Name 650V 4A TO-263, Low-noise Power MOSFET
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 4000 milliamps
QG 15 nC
PD 58000 milliwatts
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