The R6504END3 is an N-channel 650V MOSFET in a TO-252 package, designed for switching applications with low on-resistance and fast switching speed. It has a continuous drain current of ±4.0A and a maximum power dissipation of 58W. The device features a maximum drain-source on-resistance of 1.050Ω at 25°C and is RoHS compliant. The junction temperature ranges from -55°C to +150°C, with a thermal resistance from junction to case of 2.2°C/W and junction to ambient of 147°C/W when mounted on a standard FR4 PCB. The gate threshold voltage is 2V to 4V, and the device is suitable for parallel operation.
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6504END3 |
| Product Name | 650V 4A TO-252, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 4000 milliamps |
| QG | 15 nC |
| PD | 58000 milliwatts |
