ROHM Semiconductor GmbH 600V 76A TO-247, High-speed switching Power MOSFET R6076KNZ4

R6076KNZ4 is a N-channel 600V power MOSFET in a TO-247 package designed for high-speed switching applications. It has a maximum continuous drain current of ±76A and a maximum on-resistance of 42mΩ at 25°C. The device supports a maximum power dissipation of 735W and has a junction temperature range of -55°C to +150°C. It is RoHS compliant and features low on-resistance, fast switching, and ease of parallel operation. The thermal resistance from junction to case is 0.17°C/W, and the gate charge totals 165nC. The body diode has a reverse recovery time of 750ns and peak reverse recovery current of 55A.