ROHM Semiconductor GmbH 600V 76A TO-247, Low-noise Power MOSFET R6076ENZ4

R6076ENZ4 is a low-noise N-channel power MOSFET designed for switching applications, featuring a maximum drain-source voltage (V_DSS) of 600V and a continuous drain current (I_D) rating of ±76A. The device has a low on-resistance (R_DS(on)) of 0.042Ω, which contributes to its efficiency in power management. It supports a power dissipation of up to 735W and is capable of handling pulsed drain currents of ±228A. The MOSFET is RoHS compliant and features Pb-free plating, making it suitable for environmentally conscious designs. Its thermal resistance from junction to case is 0.17°C/W, and it operates within a junction temperature range of -55°C to +150°C. The device is packaged in a TO-247 format and is suitable for applications requiring fast switching speeds and ease of parallel use.