ROHM Semiconductor GmbH 600V 47A TO-247, High-speed switching Power MOSFET R6047KNZ4

R6047KNZ4 is a high-speed switching N-channel power MOSFET with a maximum drain-source voltage (V_DSS) of 600V and a continuous drain current (I_D) rating of ±47A. It features a low on-resistance of 72mΩ, which enhances efficiency in power applications. The device is capable of handling pulsed drain currents up to ±141A and has a power dissipation capability of 481W at a case temperature of 25°C. The MOSFET is designed for easy parallel use and is compliant with RoHS standards, featuring Pb-free plating. It operates within a junction temperature range of -55°C to +150°C, making it suitable for various environmental conditions. The device also exhibits fast switching characteristics, with a turn-on delay time of approximately 55ns and a fall time of about 105ns, which can be advantageous in high-frequency applications. Overall, R6047KNZ4 is suitable for switching applications where high voltage and current handling, along with fast switching speeds, are required.