The R6035ENZ4 is a silicon N-channel MOSFET rated for 600V drain-source voltage and 35A continuous drain current, housed in a TO-247 package. It features a maximum on-resistance of 102 mΩ at 25°C, power dissipation of 379 W, and an operating junction temperature range of -55°C to +150°C. The device is RoHS compliant and designed for switching applications with fast switching characteristics and easy parallel operation. Thermal resistance from junction to case is 0.33°C/W, and from junction to ambient is 30°C/W. It meets RoHS standards and includes avalanche capabilities with a single-pulse energy rating of 796 mJ.
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6035ENZ4 |
| Product Name | 600V 35A TO-247, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 600 volts |
| IDSS | 35000 milliamps |
| QG | 110 nC |
| PD | 379000 milliwatts |
