ROHM Semiconductor GmbH 600V 30A TO-247, Low-noise Power MOSFET R6030ENZ4

Description
R6030ENZ4 is a power MOSFET for switching applications.
Description
R6030ENZ4 is a power MOSFET for switching applications.
Datasheet
Datasheet Summary
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R6030ENZ4 is a N-channel 600V 30A power MOSFET in a TO-247 package for switching applications. It has a maximum on-resistance of 0.130Ω at 25°C and can dissipate up to 305W. The device supports a continuous drain current of ±30A and a pulsed drain current of ±80A, with an avalanche energy rating of 636mJ. It is RoHS compliant and features ultra-fast switching speed. The junction temperature range operates from -55°C to +150°C and thermal resistance from junction to case is 0.41°C/W.

Datasheet Summary
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R6030ENZ4 is a N-channel 600V 30A power MOSFET in a TO-247 package for switching applications. It has a maximum on-resistance of 0.130Ω at 25°C and can dissipate up to 305W. The device supports a continuous drain current of ±30A and a pulsed drain current of ±80A, with an avalanche energy rating of 636mJ. It is RoHS compliant and features ultra-fast switching speed. The junction temperature range operates from -55°C to +150°C and thermal resistance from junction to case is 0.41°C/W.

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600V 30A TO-247, Low-noise Power MOSFET - R6030ENZ4 - ROHM Semiconductor GmbH
Willich, Germany
600V 30A TO-247, Low-noise Power MOSFET
R6030ENZ4
600V 30A TO-247, Low-noise Power MOSFET R6030ENZ4
R6030ENZ4 is a power MOSFET for switching applications.

R6030ENZ4 is a power MOSFET for switching applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number R6030ENZ4
Product Name 600V 30A TO-247, Low-noise Power MOSFET
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 30000 milliamps
QG 85 nC
PD 305000 milliwatts
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