ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6025ANZFL1C8

N-channel 600V 25A power MOSFET in a TO-3PF package, with a maximum on-resistance of 0.15Ω at 25°C, designed for switching power supplies. The device has a continuous drain current of ±25A at 25°C, a power dissipation of 150W, and a gate-source voltage rating of ±30V. It is RoHS compliant with Pb-free lead plating, has a junction temperature range of -55°C to +150°C, and meets the AEC-Q200 automotive qualification standard. Thermal resistance from junction to case is 0.83°C/W. Packaging is in tubes of 360 units.