ROHM Semiconductor GmbH 600V 24A TO-247, High-speed switching Power MOSFET R6024KNZ4

Description
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Description
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Datasheet
Datasheet Summary
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The R6024KNZ4 is a 600 V, 24 A N-channel Power MOSFET in a TO-247 package, designed for high-speed switching applications. It has a maximum on-resistance of 0.165 Ω at 25 °C and dissipates up to 245 W at 25 °C case temperature. The device supports a junction temperature range of -55 °C to +150 °C, with junction-to-case thermal resistance of 0.51 °C/W and junction-to-ambient thermal resistance of 30 °C/W. It is RoHS compliant and features fast switching, low gate charge, and body diode reverse recovery characteristics suitable for PFC and LLC topologies. The gate threshold voltage ranges from 3 to 5 V, and total gate charge is 45 nC at 300 V drain-source voltage.

Datasheet Summary
Powered by GS/AI

The R6024KNZ4 is a 600 V, 24 A N-channel Power MOSFET in a TO-247 package, designed for high-speed switching applications. It has a maximum on-resistance of 0.165 Ω at 25 °C and dissipates up to 245 W at 25 °C case temperature. The device supports a junction temperature range of -55 °C to +150 °C, with junction-to-case thermal resistance of 0.51 °C/W and junction-to-ambient thermal resistance of 30 °C/W. It is RoHS compliant and features fast switching, low gate charge, and body diode reverse recovery characteristics suitable for PFC and LLC topologies. The gate threshold voltage ranges from 3 to 5 V, and total gate charge is 45 nC at 300 V drain-source voltage.

Suppliers

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600V 24A TO-247, High-speed switching Power MOSFET - R6024KNZ4 - ROHM Semiconductor GmbH
Willich, Germany
600V 24A TO-247, High-speed switching Power MOSFET
R6024KNZ4
600V 24A TO-247, High-speed switching Power MOSFET R6024KNZ4
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number R6024KNZ4
Product Name 600V 24A TO-247, High-speed switching Power MOSFET
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 24000 milliamps
QG 45 nC
PD 245000 milliwatts
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