The R6020KNZ4 is a silicon N-channel MOSFET designed for high-speed switching applications, packaged in a TO-247 case with a maximum drain-source voltage of 600 V and a continuous drain current of ±20 A at 25°C. It has a maximum on-resistance of 0.196 Ω at 25°C and dissipates up to 231 W with a junction temperature range of -55°C to +150°C. The device is RoHS compliant and features low on-resistance, fast switching, and parallel operability. Thermal resistance from junction to case is 0.54 °C/W and from junction to ambient is 30 °C/W.
R6020KNZ4 is a power MOSFET for switching applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6020KNZ4 |
| Product Name | 600V 20A TO-247, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 600 volts |
| IDSS | 20000 milliamps |
| QG | 40 nC |
| PD | 231000 milliwatts |
