ROHM Semiconductor GmbH 600V 20A TO-3PF, High-speed switching Power MOSFET R6020KNZ

R6020KNZ is an N-channel 600V, 20A power MOSFET in a TO-3PF package, designed for high-speed switching applications. It has a maximum on-resistance of 0.196Ω at 25°C and can handle a continuous drain current of ±20A. The device supports peak drain currents up to ±60A with pulsed conditions and dissipates up to 68W at 25°C. Thermal resistance from junction to case is 1.8°C/W, and junction-to-ambient is 40°C/W. It operates over a junction and storage temperature range of -55°C to 150°C, is RoHS compliant, and features an avalanche energy rating of 418 mJ. The gate threshold voltage ranges from 3V to 5V, and the forward body diode has a reverse recovery time of 500 ns.