ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6020ANZFL1C8

The R6020ANZ is an N-channel MOSFET designed for switching applications, housed in a TO-3PF package with dimensions of 15.5 mm in length, 5.62 mm in width, and 8.41 mm in height. It has a drain-source breakdown voltage of 600 V and a continuous drain current rating of 20 A, with a maximum power dissipation of 120 W. The device features a low on-resistance of up to 0.22 Ω at 10 A and 10 V gate-source voltage, and a channel-to-case thermal resistance of 1.04 °C/W. It operates over a storage temperature range of -55 °C to +150 °C. The part is qualified under RoHS standards and meets the avalanche current and energy ratings of 10 A and 26.7 mJ respectively, as tested with a 500 μH inductor and 25 Ω gate resistor.