R6011KNJ is an N-channel 600V 11A power MOSFET in a TO-263 package, designed for high-speed switching applications. It has a maximum on-resistance of 0.39Ω at 25⁰C, a continuous drain current of ±11A, and a power dissipation of 124W. The device features ultra-fast switching, low gate charge, and is RoHS compliant. Its junction temperature range is -55⁰C to +150⁰C, with a thermal resistance from junction to case of 1.0⁰C/W and junction to ambient of 80⁰C/W on an FR4 PCB. The gate threshold voltage is 3V to 5V, and the body diode has a reverse recovery time of 355ns.
R6011KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.
R6011KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | R6011KNJ | R6011KNJ |
| Product Name | 600V 11A TO-263, High-speed switching Power MOSFET | Nch 600V 11A Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 11000 milliamps | 11000 milliamps |
| QG | 22 nC | 22 nC |
| PD | 124000 milliwatts | 124000 milliwatts |
