The R6011KND3 is an N-channel 600V 11A power MOSFET in a TO-252 package, designed for high-speed switching applications. It has a maximum on-resistance of 0.39Ω at 25°C, a continuous drain current of ±11A, and a power dissipation of 124W. The device is RoHS compliant and features ultra-fast switching, low gate charge, and easy paralleling. Its junction operating temperature ranges from -55°C to +150°C, and it meets a single-pulse avalanche energy rating of 210mJ. Thermal resistance from junction to case is 1.0°C/W, and junction-to-ambient is 147°C/W when mounted on an FR4 PCB.
Power MOSFET R6011KND3 is suitable for switching power supply.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6011KND3 |
| Product Name | 600V 11A TO-252, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 600 volts |
| IDSS | 11000 milliamps |
| QG | 22 nC |
| PD | 124000 milliwatts |
