ROHM Semiconductor GmbH 600V 11A TO-252, High-speed switching Power MOSFET R6011KND3

The R6011KND3 is an N-channel 600V 11A power MOSFET in a TO-252 package, designed for high-speed switching applications. It has a maximum on-resistance of 0.39Ω at 25°C, a continuous drain current of ±11A, and a power dissipation of 124W. The device is RoHS compliant and features ultra-fast switching, low gate charge, and easy paralleling. Its junction operating temperature ranges from -55°C to +150°C, and it meets a single-pulse avalanche energy rating of 210mJ. Thermal resistance from junction to case is 1.0°C/W, and junction-to-ambient is 147°C/W when mounted on an FR4 PCB.