ROHM Semiconductor GmbH 600V 11A TO-252, Low-noise Power MOSFET R6011END3

Description
Power MOSFET R6011END3 is suitable for switching power supply.
Description
Power MOSFET R6011END3 is suitable for switching power supply.
Datasheet
Datasheet Summary
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The R6011END3 is an N-channel 600V 11A power MOSFET in a TO-252 package, designed for switching applications. It has a maximum drain-source voltage of 600V, continuous drain current of ±11A, and power dissipation of 124W at 25°C. The on-resistance is up to 390mΩ at 25°C, and it supports a junction temperature range of -55°C to +150°C. The device is RoHS compliant, features low radiation noise, and is packaged in an embossed tape reel with a basic ordering unit of 2500 pieces.

Datasheet Summary
Powered by GS/AI

The R6011END3 is an N-channel 600V 11A power MOSFET in a TO-252 package, designed for switching applications. It has a maximum drain-source voltage of 600V, continuous drain current of ±11A, and power dissipation of 124W at 25°C. The on-resistance is up to 390mΩ at 25°C, and it supports a junction temperature range of -55°C to +150°C. The device is RoHS compliant, features low radiation noise, and is packaged in an embossed tape reel with a basic ordering unit of 2500 pieces.

Suppliers

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600V 11A TO-252, Low-noise Power MOSFET - R6011END3 - ROHM Semiconductor GmbH
Willich, Germany
600V 11A TO-252, Low-noise Power MOSFET
R6011END3
600V 11A TO-252, Low-noise Power MOSFET R6011END3
Power MOSFET R6011END3 is suitable for switching power supply.

Power MOSFET R6011END3 is suitable for switching power supply.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number R6011END3
Product Name 600V 11A TO-252, Low-noise Power MOSFET
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 11000 milliamps
QG 32 nC
PD 124000 milliwatts
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