R6009END3 is an N-channel 600V 9A power MOSFET in a TO-252 package, designed for switching applications. It has a maximum drain-source on-resistance of 0.535Ω at 25°C and can dissipate up to 94W. The device supports a continuous drain current of ±9A and a pulsed drain current of ±18A, with an avalanche energy rating of 153mJ. It is RoHS compliant and features low on-resistance and fast switching speed. The junction temperature range is -55°C to +150°C, and thermal resistance from junction to case is 1.3°C/W.
Power MOSFET R6009END3 is suitable for switching power supply.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6009END3 |
| Product Name | 600V 9A TO-252, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 600 volts |
| IDSS | 9000 milliamps |
| QG | 23 nC |
| PD | 94000 milliwatts |
