ROHM Semiconductor GmbH 600V 7A TO-252, Low-noise Power MOSFET R6007END3

The R6007END3 is an N-channel 600V MOSFET in a TO-252 package, designed for switching applications. It has a maximum continuous drain current of 7A and a maximum on-resistance of 0.62Ω at 25°C. The device supports a power dissipation of 78W and operates with a junction temperature range of -55°C to +150°C. It is RoHS compliant and features low on-resistance, fast switching speed, and easy parallel operation. Thermal resistance junction-to-case is 1.6°C/W, and junction-to-ambient is 147°C/W when mounted on a standard FR4 PCB. The gate threshold voltage ranges from 2V to 4V, and the device includes a body diode with a reverse recovery time of 340ns. Avalanche energy ratings are 133mJ per pulse.