The R6006KNX is an N-channel 600V power MOSFET in a TO-220FM package, designed for high-speed switching applications. It has a continuous drain current rating of ±6A and a maximum on-resistance of 0.83Ω at 25°C. The device supports a pulsed drain current of ±18A, a gate-source voltage of ±20V, and a power dissipation of 40W. The junction temperature operates from -55°C to 150°C, with a thermal resistance from junction to case of 3.13°C/W and junction to ambient of 70°C/W. It is RoHS compliant and features avalanche energy endurance of 65mJ. The part includes a body diode with a reverse recovery time of 290ns.
R6006KNX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6006KNX |
| Product Name | 600V 6A TO-220FM, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 600 volts |
| IDSS | 6000 milliamps |
| QG | 12 nC |
| PD | 40000 milliwatts |
