R6006KND3 is a N-channel 600V power MOSFET in a TO-252 package designed for high-speed switching applications. It has a maximum continuous drain current of 6A and a maximum on-resistance of 830mΩ at 25°C. The device is rated for 70W power dissipation and supports a junction temperature range of -55°C to +150°C. It is RoHS compliant and features ultra-fast switching, low gate charge, and easy parallel operation. Thermal resistance from junction to case is 1.8°C/W and junction to ambient is 147°C/W. The body diode has a reverse recovery time of 290ns and a peak reverse recovery current of 15A.
R6006KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6006KND3 |
| Product Name | 600V 6A TO-252, High-speed switching Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 600 volts |
| IDSS | 6000 milliamps |
| QG | 12 nC |
| PD | 70000 milliwatts |
