QS8K2HZG is a dual N-channel MOSFET for switching applications, housed in a TSMT8 surface-mount package. It has a drain-source voltage rating of 30 V and a continuous drain current of ±3.5 A, with a maximum power dissipation of 1.5 W. The device features low on-resistance (max. 54 mΩ at V_{GS}=4.5V, I_D=3.5A), built-in gate-source protection diodes, and is RoHS compliant. It is AEC-Q101 qualified for automotive applications and operates over a junction temperature range of -55°C to +150°C.
QS8K2HZG is a dual MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | QS8K2HZG |
| Product Name | Automotive 30V Nch+Nch Small Signal MOSFET |
| Polarity | N-Channel |
