ROHM Semiconductor GmbH -12V Pch+Pch Middle Power MOSFET QS8J13

The QS8J13 is a dual P-channel MOSFET in a TSMT8 surface mount package, designed for switching applications. It features a drain-source voltage rating of -12V and a continuous drain current of ±5.5A, with a maximum power dissipation of 1.5W when mounted on a ceramic board. The device has a maximum on-resistance of 22mΩ at -4.5V gate-source voltage and -5.5A drain current, and operates with a junction temperature up to 150°C. It is RoHS compliant and halogen-free, with a thermal resistance from junction to ambient of 83.3°C/W. Packaging is tape and reel on a 180mm reel, with a basic ordering unit of 3000 pieces.