QH8MC5 is a dual N-channel and P-channel power MOSFET in a TSMT8 package, designed for switching applications. It features a 60V drain-source voltage rating for the N-channel and -60V for the P-channel, with continuous drain currents of ±3.0A and ±3.5A respectively. The maximum on-state resistance is 90mΩ for the N-channel and 91mΩ for the P-channel at 10V gate drive. Total power dissipation is 1.5W, with thermal resistance of 83.3°C/W when mounted on a ceramic board. The device is RoHS compliant, halogen-free, and meets AEC-Q200 qualification. Operating junction temperature ranges from -55°C to +150°C.
QH8MC5 is Nch + Pch dual MOSFET which supports 60V withstand voltage. This is designed for 24V input equipments such as factory automation equipments, and motors mounted on base stations (cooling fans). It contains ROHM's ultra-low on-resistance Nch / Pch MOSFETs in one package. By combining the optimum Nch + Pch, you can reduce the design efforts. It also contributes to lower power consumption of equipment.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | QH8MC5 |
| Product Name | 60V 3.0A/3.5A, Dual Nch+Pch, TSMT8, Power MOSFET |
| Polarity | N-Channel; P-Channel |
| V(BR)DSS | 60 volts |
| IDSS | 3000 milliamps |
| QG | 1.7 nC |
| PD | 1500 milliwatts |
