QH8MB5 is a dual N-channel and P-channel 40V power MOSFET in a TSMT8 package, designed for switching applications. The N-channel device has a maximum drain-source voltage of 40V and continuous drain current of ±4.5A, while the P-channel device has a maximum drain-source voltage of -40V and continuous drain current of ±5.0A. Both devices have maximum on-resistance values of 44mΩ and 41mΩ respectively at specified gate-source voltages. The device is rated for total power dissipation of 1.5W and operates within a junction temperature range of -55°C to +150°C. It is RoHS compliant and halogen free.
QH8MB5 is Nch + Pch dual MOSFET which supports 40V withstand voltage. This is designed for 24V input equipments such as factory automation equipments, and motors mounted on base stations (cooling fans). It contains ROHM's ultra-low on-resistance Nch / Pch MOSFETs in one package. By combining the optimum Nch + Pch, you can reduce the design efforts. It also contributes to lower power consumption of equipment.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | QH8MB5 |
| Product Name | 40V 4.5A/5.0A, Dual Nch+Pch, TSMT8, Power MOSFET |
| Polarity | N-Channel; P-Channel |
| V(BR)DSS | 40 volts |
| IDSS | 4500 milliamps |
| QG | 1.8 nC |
| PD | 1500 milliwatts |
