The QH8MA3 is a 30V N-channel and P-channel middle power MOSFET integrated in a TSMT8 surface-mount package, designed for switching applications. It features a continuous drain current of ±7.0A for the N-channel and ±5.5A for the P-channel, with maximum on-state resistances of 29mΩ and 48mΩ respectively. The device has a power dissipation rating of 2.5W, a junction temperature range of -55°C to +150°C, and meets RoHS and halogen-free standards. Thermal resistance from junction to ambient is 83.3°C/W when mounted on a ceramic board.
The Middle Power MOSFET QH8MA3 is suitable for switching power supply.
The Middle Power MOSFET QH8MA3 is suitable for switching power supply.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | QH8MA3 | QH8MA3 |
| Product Name | 30V Nch+Pch Middle Power MOSFET | 30V Nch+Pch Middle Power MOSFET |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 7000 milliamps | 7000 milliamps |
| QG | 3.7 nC | 3.7 nC |
| PD | 2500 milliwatts | 2500 milliwatts |
