The QH8M22 is a 40V N-channel and P-channel power MOSFET pair in a TSMT8 surface-mount package, designed for switching applications. It has a maximum continuous drain current of ±4.5A for the Nch and ±2.0A for the Pch, with RDS(on) of 46.0mΩ and 190mΩ respectively at 25°C. The total power dissipation is rated at 1.5W, with an operating junction temperature range of -55°C to +150°C. The device is RoHS compliant and halogen-free.
QH8M22 is the high reliability transistor, suitable for switching applications.
QH8M22 is the high reliability transistor, suitable for switching applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | QH8M22 | QH8M22 |
| Product Name | 40V Nch+Pch Middle Power MOSFET | 40V Nch+Pch Middle Power MOSFET |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
| V(BR)DSS | 40 volts | 40 volts |
| IDSS | 4500 milliamps | 4500 milliamps |
| QG | 1.3 nC | 1.3 nC |
| PD | 1500 milliwatts | 1500 milliwatts |
