QH8KC6 is a dual N-channel power MOSFET in a TSMT8 package, rated for 60 V drain-source voltage and ±5.5 A continuous drain current, with a maximum on-resistance of 30 mΩ at 10 V gate-source voltage and 1.5 W power dissipation. It is RoHS compliant and halogen-free. Thermal resistance is 83.3 °C/W on a ceramic board and 113 °C/W on FR4. Junction temperature operates between -55 °C and 150 °C. The device meets no specified industry standards beyond RoHS compliance.
QH8KC6 is Nch + Nch dual MOSFET which supports 60V withstand voltage. This is designed for 24V input equipments such as factory automation equipments, and motors mounted on base stations (cooling fans). This product consists of a low on-resistance Nch MOSFET which is reduced 58% compared to conventional ROHM products. This contributes to low power consumption of various devices.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | QH8KC6 |
| Product Name | 60V 5.5A, Dual Nch+Nch, TSMT8, Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 60 volts |
| IDSS | 5500 milliamps |
| QG | 3.9 nC |
| PD | 1500 milliwatts |
