QH8KC5 is a dual N-channel power MOSFET in a TSMT8 package, rated for 60V drain-source voltage and ±3.0A continuous drain current, with a maximum power dissipation of 1.5W. It features a maximum on-resistance of 90mΩ at 10V gate-source voltage and 140mΩ at 4.5V gate-source voltage. The device is RoHS compliant, halogen-free, and operates from -55°C to +150°C. Thermal resistance is 83.3°C/W when mounted on a ceramic board and 113°C/W on FR4. It is designed for switching applications and includes integrated body diodes with a forward voltage of 1.2V at 1.25A. The package is tape-reel packed with a 180mm reel and 3000 pieces per reel.
QH8KC5 is Nch + Nch dual MOSFET which supports 60V withstand voltage. This is designed for 24V input equipments such as factory automation equipments, and motors mounted on base stations (cooling fans). This product consists of a low on-resistance Nch MOSFET which is reduced 58% compared to conventional ROHM products. This contributes to low power consumption of various devices.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | QH8KC5 |
| Product Name | 60V 3A, Dual Nch+Nch, TSMT8, Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 60 volts |
| IDSS | 3000 milliamps |
| QG | 1.7 nC |
| PD | 1500 milliwatts |
