The QH8KA4 is a 30V N-channel dual MOSFET in a TSMT8 surface-mount package, designed for switching and battery applications. It has a continuous drain current rating of ±9.0A and a maximum on-state resistance of 17.0mΩ at 4.5V gate-source voltage. The device is RoHS compliant, halogen-free, and 100% avalanche tested with a single-pulse avalanche energy of 6.2mJ. It operates over a junction temperature range of -55°C to +150°C and meets the AEC-Q200 standard for automotive reliability. Thermal resistance is 83.3°C/W junction-to-ambient when mounted on a ceramic board. The package dimensions and tape reel specifications are provided for automated assembly.
The Middle Power MOSFET QH8KA4 is suitable for switching and battery applications.
The Middle Power MOSFET QH8KA4 is suitable for switching and battery applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | QH8KA4 | QH8KA4 |
| Product Name | 30V Nch+Nch Middle Power MOSFET | 30V Nch+Nch Middle Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 9000 milliamps | 9000 milliamps |
| QG | 12 nC | 12 nC |
| PD | 1500 milliwatts | 1500 milliwatts |
