ROHM Semiconductor GmbH 30V Nch+Nch Power MOSFET QH8KA1

The QH8KA1 is a dual N-channel power MOSFET in a TSMT8 surface mount package, designed for switching applications such as motor drive. It has a drain-source voltage rating of 30V and a continuous drain current of ±4.5A. The maximum on-state resistance is 73mΩ at 10V gate-source voltage and 4.5A drain current. The device is RoHS compliant and halogen-free. Power dissipation is rated at 2.4W, with a thermal resistance from junction to ambient of 83.3°C/W when mounted on a 30×30×0.8mm ceramic board. The junction operating temperature ranges from -55°C to 150°C.