The QH8JA1 is a -20V complementary P-channel middle power MOSFET in a TSMT8 surface-mount package, designed for switching applications. It features a maximum continuous drain current of ±5.0A, a maximum on-state resistance of 38mΩ at -4.5V gate drive, and is rated for a total power dissipation of 1.5W on a ceramic board. The device supports -1.8V drive voltage, has a junction temperature range of -55°C to +150°C, and is RoHS compliant. Thermal resistance junction-to-ambient is up to 83.3°C/W on a ceramic board. The part is packaged in an 180mm tape reel with 3000 pieces per reel.
The Middle Power MOSFET QH8JA1 is suitable for switching applications.
The Middle Power MOSFET QH8JA1 is suitable for switching applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | QH8JA1 | QH8JA1 |
| Product Name | -20V Pch+Pch Middle Power MOSFET | -20V Pch+Pch Middle Power MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -20 volts | -20 volts |
| IDSS | -5000 milliamps | -5000 milliamps |
| QG | 10.2 nC | 10.2 nC |
| PD | 1500 milliwatts | 1500 milliwatts |
