These high-performance silicon micromachined linear accelerometersand inclinometers consist of a sensor element and an ASIC packaged in a3x3x0.9mm Land Grid Array (LGA). The sensor element is fabricated fromsingle-crystal silicon with proprietary Deep Reactive Ion Etching(DRIE) processes, and is protected from the environment by ahermetically-sealed silicon cap at the wafer level. TheKXTE9™s advanced, orientation-detectio
n feature reports changes inlandscape, portrait, face-up, and face-down conditions. Thissophisticated, embedded algorithm eliminates the need for continuousdata collection and complex calculations by a microprocessor. With afew adjustable parameters, the screen-rotation algorithm can beoptimized for an intuitive user experience. In addition to orientationdetection
, the KXTE9 features an activity-monitoring function. Thisfunction reports changes in a device™s motion state, either moving(active) or not moving (inactive). A highly-manufacturabl
e productwith consistent product performance across use conditions, the KXTE9operates across a supply voltage of 1.8V to 3.6V DC. The sensor element functions on the principle of differential capacitance. Acceleration causes displacement of a silicon structure resulting in a change in capacitance. An ASIC, using a standard CMOS manufacturing process, detects and transforms changes in capacitance into an analog output voltage, which is proportional to acceleration. The sense element design utilizes common mode cancellation to decrease errors from process variation and environmental stress. The voltage is digitized by an on-board A/D converter and is accessed via an inter-integrated circuit (I2C).
These high-performance silicon micromachined linear accelerometersand inclinometers consist of a sensor element and an ASIC packaged in a3x3x0.9mm Land Grid Array (LGA). The sensor element is fabricated fromsingle-crystal silicon with proprietary Deep Reactive Ion Etching(DRIE) processes, and is protected from the environment by ahermetically-sealed silicon cap at the wafer level. TheKXTE9™s advanced, orientation-detection feature reports changes inlandscape, portrait, face-up, and face-down conditions. Thissophisticated, embedded algorithm eliminates the need for continuousdata collection and complex calculations by a microprocessor. With afew adjustable parameters, the screen-rotation algorithm can beoptimized for an intuitive user experience. In addition to orientationdetection, the KXTE9 features an activity-monitoring function. Thisfunction reports changes in a device™s motion state, either moving(active) or not moving (inactive). A highly-manufacturable productwith consistent product performance across use conditions, the KXTE9operates across a supply voltage of 1.8V to 3.6V DC. The sensor element functions on the principle of differential capacitance. Acceleration causes displacement of a silicon structure resulting in a change in capacitance. An ASIC, using a standard CMOS manufacturing process, detects and transforms changes in capacitance into an analog output voltage, which is proportional to acceleration. The sense element design utilizes common mode cancellation to decrease errors from process variation and environmental stress. The voltage is digitized by an on-board A/D converter and is accessed via an inter-integrated circuit (I2C).
