The IMB3A is a dual digital transistor in a SOT-457 package, featuring two independent PNP transistors with built-in bias resistors. It has a maximum collector-emitter voltage (VCEO) of -50V and can handle a collector current (IC) of up to -100mA. The power dissipation for this component is rated at 300mW. The device is suitable for applications such as inverters, interfaces, and drivers, and is designed to minimize mounting costs and area by integrating two transistors into a single package. The IMB3A operates effectively within a temperature range of -55¬8C to +150¬8C, making it versatile for various environmental conditions.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | IMB3A | IMB3A |
| Product Name | PNP+PNP, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor) | PNP+PNP Digital transistor (with built-in resistors) |
| Polarity | PNP | PNP |
