IMB11A is a dual PNP digital transistor with built-in bias resistors in an SOT-457 package, designed for applications such as inverters, interfaces, and drivers. Each transistor has a maximum collector current of 100 mA and a supply voltage rating of -50 V. The package supports automatic mounting on SMT6 machines, reducing mounting cost and board space. The power dissipation per element is rated up to 200 mW, with a junction temperature range of -55 to +150 °C. The input resistance is 7 to 13 kΩ, and the DC current gain ranges from 30 to over. The transition frequency is 250 MHz at V_CE = -10 V and I_E = 5 mA.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | IMB11A | IMB11A |
| Product Name | PNP+PNP, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor) | PNP+PNP Digital transistor (with built-in resistors) |
| Polarity | PNP | PNP |
