ROHM Semiconductor GmbH 30V Dual Common Drain Pch+Nch Power MOSFET HS8MA2

Description
Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications.
  • 30V Dual Common Drain Pch+Nch Power MOSFET - HS8MA2 - ROHM Semiconductor GmbH
    ROHM Semiconductor GmbH
Datasheet
Description
Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications.
Datasheet

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30V Dual Common Drain Pch+Nch Power MOSFET - HS8MA2 - ROHM Semiconductor GmbH
ROHM Semiconductor GmbH
Willich, Germany
30V Dual Common Drain Pch+Nch Power MOSFET
HS8MA2
30V Dual Common Drain Pch+Nch Power MOSFET HS8MA2
Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications.

Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number HS8MA2
Product Name 30V Dual Common Drain Pch+Nch Power MOSFET
Polarity N-Channel; P-Channel
V(BR)DSS 30 volts
IDSS 7000 milliamps
QG 4.7 nC
PD 4000 milliwatts
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