HS8MA2 is a dual integrated power MOSFET module combining a 30V P-channel and a 30V N-channel device in a common drain configuration, designed for switching and motor drive applications. It is housed in a DFN3333-9DC package measuring 3.3mm x 3.3mm with a 0.75mm height. The P-channel has a maximum on-resistance of 80mΩ at Vgs = -10V and handles up to 5.5A continuous current, while the N-channel has a maximum on-resistance of 35mΩ at Vgs = 10V and handles up to 7.0A continuous current. Total power dissipation is rated at 4.0W with a thermal resistance junction-to-ambient of 83.3°C/W when mounted on a ceramic board. Both devices meet RoHS and halogen-free requirements. The operating temperature range is -55°C to +150°C.
Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | HS8MA2 |
| Product Name | 30V Dual Common Drain Pch+Nch Power MOSFET |
| Polarity | N-Channel; P-Channel |
| V(BR)DSS | 30 volts |
| IDSS | 7000 milliamps |
| QG | 4.7 nC |
| PD | 4000 milliwatts |
