ROHM Semiconductor GmbH 30V Nch+Nch Power MOSFET HS8K1

HS8K1 is a dual N-channel power MOSFET in an HSML3030L10 package designed for switching applications. Each channel has a drain-source voltage rating of 30 V, with continuous drain currents of ±10 A and ±11 A respectively. The maximum power dissipation is 2.0 W, with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to ambient is 62.5°C/W when mounted on a 40×40×0.8 mm Cu board. The device features low on-resistance, with typical values of 11.2 mΩ and 9.1 mΩ at 10 V gate drive for the respective channels. It is RoHS compliant, halogen-free, and supplied in tape and reel packaging with a basic ordering unit of 3000 pieces.