HP8MA2 is a 30V N-channel and P-channel complementary MOSFET pair in an HSOP8 surface mount package for switching applications. The N-channel device has a maximum continuous drain current of ±18A and a drain-source on-state resistance of 9.6mΩ at 10V gate voltage, while the P-channel device has a maximum continuous drain current of ±15A and a drain-source on-state resistance of 17.9mΩ at -10V gate voltage. Both devices feature a total power dissipation rating of 7.0W and a thermal resistance from junction to ambient of 41.7°C/W when mounted on a 40×40×0.8mm copper board. The package is RoHS compliant and halogen-free, with a junction temperature range of -55°C to +150°C.
HP8MA2 is low on-resistance and small surface mount package MOSFET for switching application.
HP8MA2 is low on-resistance and small surface mount package MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | HP8MA2 | HP8MA2 |
| Product Name | 30V Nch+Pch Middle Power MOSFET | 30V Nch+Pch Middle Power MOSFET |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 18000 milliamps | 18000 milliamps |
| QG | 10.5 nC | 10.5 nC |
| PD | 7000 milliwatts | 7000 milliwatts |
